IPD06P002NSAUMA1 vs IPD06P004NSAUMA1

Product Attributes

Part Number IPD06P002NSAUMA1 IPD06P004NSAUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD06P002NSAUMA1 IPD06P004NSAUMA1
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 35A, 10V 90mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id 4V @ 1.7mA 4V @ 710µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 30 V 1100 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-313 PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63