IPD068N10N3GATMA1 vs IPD068N10N3GBTMA1

Product Attributes

Part Number IPD068N10N3GATMA1 IPD068N10N3GBTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD068N10N3GATMA1 IPD068N10N3GBTMA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 90A, 10V 6.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4910 pF @ 50 V 4910 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63