IPD053N06NATMA1 vs IPD033N06NATMA1

Product Attributes

Part Number IPD053N06NATMA1 IPD033N06NATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD053N06NATMA1 IPD033N06NATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 45A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 45A, 10V 3.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36µA 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 44 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 30 V 3400 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 83W (Tc) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63