IPD031N06L3GATMA1 vs IPD035N06L3GATMA1

Product Attributes

Part Number IPD031N06L3GATMA1 IPD035N06L3GATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPD031N06L3GATMA1 IPD035N06L3GATMA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V 3.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93µA 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 4.5 V 79 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V 13000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 167W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63