IPC100N04S5L1R5ATMA1 vs IPC100N04S5L1R1ATMA1

Product Attributes

Part Number IPC100N04S5L1R5ATMA1 IPC100N04S5L1R1ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R1ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V 1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 60µA 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5340 pF @ 25 V 8250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 115W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-34 PG-TDSON-8-34
Package / Case 8-PowerTDFN 8-PowerTDFN