IPC100N04S51R9ATMA1 vs IPC100N04S51R7ATMA1

Product Attributes

Part Number IPC100N04S51R9ATMA1 IPC100N04S51R7ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPC100N04S51R9ATMA1 IPC100N04S51R7ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V 1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.4V @ 50µA 3.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 83 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3770 pF @ 25 V 4810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-34 PG-TDSON-8-34
Package / Case 8-PowerTDFN 8-PowerTDFN