IPB90R340C3ATMA2 vs IPB90R340C3ATMA1

Product Attributes

Part Number IPB90R340C3ATMA2 IPB90R340C3ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB90R340C3ATMA2 IPB90R340C3ATMA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 9.2A, 10V 340mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V 2400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB