IPB60R380P6ATMA1 vs IPB60R330P6ATMA1

Product Attributes

Part Number IPB60R380P6ATMA1 IPB60R330P6ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB60R380P6ATMA1 IPB60R330P6ATMA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V 330mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320µA 4.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 877 pF @ 100 V 1010 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 93W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB