IPB60R280P6ATMA1 vs IPB60R230P6ATMA1

Product Attributes

Part Number IPB60R280P6ATMA1 IPB60R230P6ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB60R280P6ATMA1 IPB60R230P6ATMA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc) 16.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 5.2A, 10V 230mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 430µA 4.5V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 25.5 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 100 V 1450 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 104W (Tc) 126W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3-1
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-4, D²Pak (3 Leads + Tab), TO-263AA