IPB60R280CFD7ATMA1 vs IPB60R210CFD7ATMA1

Product Attributes

Part Number IPB60R280CFD7ATMA1 IPB60R210CFD7ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB60R280CFD7ATMA1 IPB60R210CFD7ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V 210mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 180µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 807 pF @ 400 V 1015 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 51W (Tc) 64W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB