| Part Number | IPB60R120P7ATMA1 | IPB60R120C7ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 8.2A, 10V | 120mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 410µA | 4V @ 390µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 34 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1544 pF @ 400 V | 1500 pF @ 400 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 95W (Tc) | 92W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |