IPB22N03S4L-15ATMA1 vs IPB22N03S4L15ATMA1

Product Attributes

Part Number IPB22N03S4L-15ATMA1 IPB22N03S4L15ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB22N03S4L-15ATMA1 IPB22N03S4L15ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.6mOhm @ 22A, 10V 14.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10µA 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V 980 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 31W (Tc) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB