| Part Number | IPB200N25N3GATMA1 | IPB200N15N3GATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 64A, 10V | 20mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270µA | 4V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | 31 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V | 1820 pF @ 75 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |