IPB180P04P403ATMA2 vs IPB180P04P403ATMA1

Product Attributes

Part Number IPB180P04P403ATMA2 IPB180P04P403ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB180P04P403ATMA2 IPB180P04P403ATMA1
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 100A, 10V 2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 410µA 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 17640 pF @ 25 V 17640 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7-3 PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)