| Part Number | IPB180N03S4L01ATMA1 | IPB180N04S4L01ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.05mOhm @ 100A, 10V | 1.2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 140µA | 2.2V @ 140µA |
| Gate Charge (Qg) (Max) @ Vgs | 239 nC @ 10 V | 245 nC @ 10 V |
| Vgs (Max) | ±16V | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 17600 pF @ 25 V | 19100 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 188W (Tc) | 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 | PG-TO263-7-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7, D²Pak (6 Leads + Tab) |