IPB140N08S404ATMA1 vs IPB120N08S404ATMA1

Product Attributes

Part Number IPB140N08S404ATMA1 IPB120N08S404ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB140N08S404ATMA1 IPB120N08S404ATMA1
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 140A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 100A, 10V 4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V 6450 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 161W (Tc) 179W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7-3 PG-TO263-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB