IPB120P04P4L03ATMA1 vs IPB120P04P4L03ATMA2

Product Attributes

Part Number IPB120P04P4L03ATMA1 IPB120P04P4L03ATMA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB120P04P4L03ATMA1 IPB120P04P4L03ATMA2
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 340µA 2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V 234 nC @ 10 V
Vgs (Max) ±16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 25 V 15000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB