IPB06N03LA G vs IPB06N03LB G

Product Attributes

Part Number IPB06N03LA G IPB06N03LB G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB06N03LA G IPB06N03LB G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V 6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2653 pF @ 15 V 2782 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB