| Part Number | IPB065N15N3GATMA1 | IPB065N10N3GATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Not For New Designs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 100A, 10V | 6.5mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270µA | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | 64 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 75 V | 4910 pF @ 50 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7 | PG-TO263-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |