IPB065N06L G vs IPB085N06L G

Product Attributes

Part Number IPB065N06L G IPB085N06L G
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB065N06L G IPB085N06L G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.2mOhm @ 80A, 10V 8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 180µA 2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V 104 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 30 V 3500 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB