| Part Number | IPB049N08N5ATMA1 | IPB019N08N5ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 80 V | - |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | - |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 80A, 10V | - |
| Vgs(th) (Max) @ Id | 3.8V @ 66µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 40 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 125W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Supplier Device Package | PG-TO263-3 | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |