IPB048N15N5ATMA1 vs IPB044N15N5ATMA1

Product Attributes

Part Number IPB048N15N5ATMA1 IPB044N15N5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB048N15N5ATMA1 IPB044N15N5ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 60A, 10V 4.4mOhm @ 87A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264µA 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 75 V 8000 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)