IPB034N06L3GATMA1 vs IPB034N06N3GATMA1

Product Attributes

Part Number IPB034N06L3GATMA1 IPB034N06N3GATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB034N06L3GATMA1 IPB034N06N3GATMA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 90A, 10V 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93µA 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 4.5 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V 11000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 167W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)