| Part Number | IPB021N06N3GATMA1 | IPB023N06N3GATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 140A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 100A, 10V | 2.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 196µA | 4V @ 141µA |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V | 198 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V | 16000 pF @ 30 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 250W (Tc) | 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-7 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) |