IPB015N08N5ATMA1 vs IPB017N08N5ATMA1

Product Attributes

Part Number IPB015N08N5ATMA1 IPB017N08N5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB015N08N5ATMA1 IPB017N08N5ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279µA 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 222 nC @ 10 V 223 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V 16900 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB