IPB010N06NATMA1 vs IPB014N06NATMA1

Product Attributes

Part Number IPB010N06NATMA1 IPB014N06NATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPB010N06NATMA1 IPB014N06NATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 45A (Ta), 180A (Tc) 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs 208 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 30 V 7800 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 3W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)