IPAN60R280PFD7SXKSA1 vs IPAN60R210PFD7SXKSA1

Product Attributes

Part Number IPAN60R280PFD7SXKSA1 IPAN60R210PFD7SXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPAN60R280PFD7SXKSA1 IPAN60R210PFD7SXKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.6A, 10V 210mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 180µA 4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 656 pF @ 400 V 1015 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 24W (Tc) 25W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack