IPAW60R180P7SXKSA1 vs IPAN60R180P7SXKSA1

Product Attributes

Part Number IPAW60R180P7SXKSA1 IPAN60R180P7SXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPAW60R180P7SXKSA1 IPAN60R180P7SXKSA1
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V -
Vgs(th) (Max) @ Id 4V @ 280µA -
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V -
FET Feature - -
Power Dissipation (Max) 26W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220 Full Pack PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack