IPA65R225C7XKSA1 vs IPA65R125C7XKSA1

Product Attributes

Part Number IPA65R225C7XKSA1 IPA65R125C7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPA65R225C7XKSA1 IPA65R125C7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V 125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V 1670 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 29W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack