| Part Number | IPA65R1K0CEXKSA1 | IPA65R1K5CEXKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) | 5.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V | 1.5Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V | 10.5 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V | 225 pF @ 100 V |
| FET Feature | Super Junction | Super Junction |
| Power Dissipation (Max) | 68W (Tc) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-FP | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack |