IPA65R045C7XKSA1 vs IPA65R065C7XKSA1

Product Attributes

Part Number IPA65R045C7XKSA1 IPA65R065C7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPA65R045C7XKSA1 IPA65R065C7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 24.9A, 10V 65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 400 V 3020 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack