IPA50R950CEXKSA2 vs IPA50R650CEXKSA2

Product Attributes

Part Number IPA50R950CEXKSA2 IPA50R650CEXKSA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPA50R950CEXKSA2 IPA50R650CEXKSA2
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V 13V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V 650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100µA 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 231 pF @ 100 V 342 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 25.7W (Tc) 27.2W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-FP PG-TO220-3-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack