| Part Number | IMBF170R650M1XTMA1 | IMBF170R450M1XTMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) | 9.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V | 12V, 15V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.5A, 15V | 450mOhm @ 2A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.7mA | 5.7V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 12 V | 11 nC @ 12 V |
| Vgs (Max) | +20V, -10V | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 1000 V | 610 pF @ 1000 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 88W (Tc) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7-13 | PG-TO263-7-13 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |