| Part Number | IKZ50N65EH5XKSA1 | IKW50N65EH5XKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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| Product Status | Active | Active |
| IGBT Type | Trench | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | 650 V |
| Current - Collector (Ic) (Max) | 85 A | 80 A |
| Current - Collector Pulsed (Icm) | 200 A | 200 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | 2.1V @ 15V, 50A |
| Power - Max | 273 W | 275 W |
| Switching Energy | 410µJ (on), 190µJ (off) | 1.5mJ (on), 500µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 109 nC | 120 nC |
| Td (on/off) @ 25°C | 20ns/250ns | 25ns/172ns |
| Test Condition | 400V, 25A, 12Ohm, 15V | 400V, 50A, 12Ohm, 15V |
| Reverse Recovery Time (trr) | 53 ns | 81 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-4 | TO-247-3 |
| Supplier Device Package | PG-TO247-4 | PG-TO247-3 |