IKW40N65ET7XKSA1 vs IKW50N65ET7XKSA1

Product Attributes

Part Number IKW40N65ET7XKSA1 IKW50N65ET7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKW40N65ET7XKSA1 IKW50N65ET7XKSA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 76 A 50 A
Current - Collector Pulsed (Icm) 120 A 150 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 40A 1.65V @ 15V, 50A
Power - Max 230.8 W 273 W
Switching Energy 1.05mJ (on), 590µJ (off) 1.2mJ (on), 850µJ (off)
Input Type Standard Standard
Gate Charge 235 nC 290 nC
Td (on/off) @ 25°C 20ns/310ns 26ns/350ns
Test Condition 400V, 40A, 10Ohm, 15V 400V, 50A, 9Ohm, 15V
Reverse Recovery Time (trr) 85 ns 93 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3