IKW30N65ES5XKSA1 vs IKW30N65EL5XKSA1

Product Attributes

Part Number IKW30N65ES5XKSA1 IKW30N65EL5XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKW30N65ES5XKSA1 IKW30N65EL5XKSA1
Product Status Active Active
IGBT Type Trench -
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 62 A 85 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A 1.35V @ 15V, 30A
Power - Max 188 W 227 W
Switching Energy 560µJ (on), 320µJ (off) 470µJ (on), 1.35mJ (off)
Input Type Standard Standard
Gate Charge 70 nC 168 nC
Td (on/off) @ 25°C 17ns/124ns 33ns/308ns
Test Condition 400V, 30A, 13Ohm, 15V 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 75 ns 100 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3