IKW50N60DTPXKSA1 vs IKW30N60DTPXKSA1

Product Attributes

Part Number IKW50N60DTPXKSA1 IKW30N60DTPXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKW50N60DTPXKSA1 IKW30N60DTPXKSA1
Product Status Not For New Designs Not For New Designs
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 80 A 53 A
Current - Collector Pulsed (Icm) 150 A 90 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A 1.8V @ 15V, 30A
Power - Max 319.2 W 200 W
Switching Energy 1.53mJ (on), 850µJ (off) 710µJ (on), 420µJ (off)
Input Type Standard Standard
Gate Charge 249 nC 130 nC
Td (on/off) @ 25°C 20ns/215ns 15ns/179ns
Test Condition 400V, 50A, 7Ohm, 15V 400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr) 115 ns 76 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3