IKW20N65ET7XKSA1 vs IKW30N65ET7XKSA1

Product Attributes

Part Number IKW20N65ET7XKSA1 IKW30N65ET7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKW20N65ET7XKSA1 IKW30N65ET7XKSA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 40 A 30 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 20A 1.65V @ 15V, 30A
Power - Max 136 W 188 W
Switching Energy 360µJ (on), 360µJ (off) 590µJ (on), 500µJ (off)
Input Type Standard Standard
Gate Charge 128 nC 180 nC
Td (on/off) @ 25°C 16ns/210ns 20ns/245ns
Test Condition 400V, 20A, 12Ohm, 15V 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 70 ns 80 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3