IKFW50N65ES5XKSA1 vs IKFW60N65ES5XKSA1

Product Attributes

Part Number IKFW50N65ES5XKSA1 IKFW60N65ES5XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKFW50N65ES5XKSA1 IKFW60N65ES5XKSA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 74 A 77 A
Current - Collector Pulsed (Icm) 160 A 200 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 40A 1.7V @ 15V, 50A
Power - Max 127 W 138 W
Switching Energy 860µJ (on), 400µJ (off) 1.23mJ (on), 550µJ (off)
Input Type Standard Standard
Gate Charge 95 nC 120 nC
Td (on/off) @ 25°C 19ns/130ns 20ns/127ns
Test Condition 400V, 40A, 10Ohm, 15V 400V, 50A, 8.2Ohm, 15V
Reverse Recovery Time (trr) 69 ns 77 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-HSIP247-3-2 PG-HSIP247-3-2