IKD15N60RC2ATMA1 vs IKD10N60RC2ATMA1

Product Attributes

Part Number IKD15N60RC2ATMA1 IKD10N60RC2ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKD15N60RC2ATMA1 IKD10N60RC2ATMA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 28 A 18.8 A
Current - Collector Pulsed (Icm) 45 A 30 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A 2.3V @ 15V, 10A
Power - Max 115.4 W 79 W
Switching Energy 570µJ (on), 350µJ (off) 320µJ (on), 170µJ (off)
Input Type Standard Standard
Gate Charge 72 nC 48 nC
Td (on/off) @ 25°C 18ns/374ns 14ns/250ns
Test Condition 400V, 15A, 49Ohm, 15V 400V, 10A, 49Ohm, 15V
Reverse Recovery Time (trr) 129 ns 104 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3 PG-TO252-3