IKB40N65ES5ATMA1 vs IKB30N65ES5ATMA1

Product Attributes

Part Number IKB40N65ES5ATMA1 IKB30N65ES5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKB40N65ES5ATMA1 IKB30N65ES5ATMA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 79 A 62 A
Current - Collector Pulsed (Icm) 160 A 120 A
Vce(on) (Max) @ Vge, Ic 1.74V @ 15V, 40A 1.7V @ 15V, 30A
Power - Max 230 W 188 W
Switching Energy 860µJ (on), 400µJ (off) 560µJ (on), 320µJ (off)
Input Type Standard Standard
Gate Charge 95 nC 70 nC
Td (on/off) @ 25°C 19ns/130ns 17ns/124ns
Test Condition 400V, 40A, 10Ohm, 15V 400V, 30A, 13Ohm, 15V
Reverse Recovery Time (trr) 73 ns 75 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3 PG-TO263-3