IKB20N65EH5ATMA1 vs IKB30N65EH5ATMA1

Product Attributes

Part Number IKB20N65EH5ATMA1 IKB30N65EH5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IKB20N65EH5ATMA1 IKB30N65EH5ATMA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 38 A 55 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A 2.1V @ 15V, 30A
Power - Max 125 W 188 W
Switching Energy 560µJ (on), 130µJ (off) 870µJ (on), 300µJ (off)
Input Type Standard Standard
Gate Charge 48 nC 70 nC
Td (on/off) @ 25°C 19ns/160ns 24ns/159ns
Test Condition 400V, 20A, 32Ohm, 15V 400V, 30A, 22Ohm, 15V
Reverse Recovery Time (trr) 80 ns 75 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3 PG-TO263-3