IHW30N110R3FKSA1 vs IHW30N120R3FKSA1

Product Attributes

Part Number IHW30N110R3FKSA1 IHW30N120R3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IHW30N110R3FKSA1 IHW30N120R3FKSA1
Product Status Last Time Buy Obsolete
IGBT Type Trench -
Voltage - Collector Emitter Breakdown (Max) 1100 V 1200 V
Current - Collector (Ic) (Max) 60 A 60 A
Current - Collector Pulsed (Icm) 90 A 90 A
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 30A 1.75V @ 15V, 30A
Power - Max 333 W 349 W
Switching Energy 1.15mJ (off) 1.47mJ (off)
Input Type Standard Standard
Gate Charge 180 nC 263 nC
Td (on/off) @ 25°C -/350ns -/326ns
Test Condition 600V, 30A, 15Ohm, 15V 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1