IHW15N120E1XKSA1 vs IHW25N120E1XKSA1

Product Attributes

Part Number IHW15N120E1XKSA1 IHW25N120E1XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IHW15N120E1XKSA1 IHW25N120E1XKSA1
Product Status Active Active
IGBT Type NPT and Trench NPT and Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 30 A 50 A
Current - Collector Pulsed (Icm) 45 A 75 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A 2V @ 15V, 25A
Power - Max 156 W 231 W
Switching Energy 300µJ (off) 800µJ (off)
Input Type Standard Standard
Gate Charge 90 nC 147 nC
Td (on/off) @ 25°C - -
Test Condition - -
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3