IGW75N65H5XKSA1 vs IGZ75N65H5XKSA1

Product Attributes

Part Number IGW75N65H5XKSA1 IGZ75N65H5XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGW75N65H5XKSA1 IGZ75N65H5XKSA1
Product Status Active Active
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 120 A 119 A
Current - Collector Pulsed (Icm) 300 A 300 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A 2.1V @ 15V, 75A
Power - Max 395 W 395 W
Switching Energy 2.25mJ (on), 950µJ (off) 680µJ (on), 430µJ (off)
Input Type Standard Standard
Gate Charge 160 nC 166 nC
Td (on/off) @ 25°C 28ns/174ns 26ns/347ns
Test Condition 400V, 75A, 8Ohm, 15V 400V, 37.5A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-4
Supplier Device Package PG-TO247-3 PG-TO247-4