IGW50N60H3FKSA1 vs IGW60N60H3FKSA1

Product Attributes

Part Number IGW50N60H3FKSA1 IGW60N60H3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGW50N60H3FKSA1 IGW60N60H3FKSA1
Product Status Active Active
IGBT Type Trench Field Stop Trench
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 100 A 80 A
Current - Collector Pulsed (Icm) 200 A 180 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A 2.3V @ 15V, 60A
Power - Max 333 W 416 W
Switching Energy 2.36mJ 2.1mJ (on), 1.13mJ (off)
Input Type Standard Standard
Gate Charge 315 nC 375 nC
Td (on/off) @ 25°C 23ns/235ns 27ns/252ns
Test Condition 400V, 50A, 7Ohm, 15V 400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3