IGW50N65H5AXKSA1 vs IGW40N65H5AXKSA1

Product Attributes

Part Number IGW50N65H5AXKSA1 IGW40N65H5AXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGW50N65H5AXKSA1 IGW40N65H5AXKSA1
Product Status Not For New Designs Obsolete
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 74 A
Current - Collector Pulsed (Icm) 150 A 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A 2.1V @ 15V, 40A
Power - Max 270 W 250 W
Switching Energy 450µJ (on), 160µJ (off) 360µJ (on), 110µJ (off)
Input Type Standard Standard
Gate Charge 116 nC 92 nC
Td (on/off) @ 25°C 21ns/173ns 20ns/149ns
Test Condition 400V, 25A, 12Ohm, 15V 400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3