IGW30N60TPXKSA1 vs IGW50N60TPXKSA1

Product Attributes

Part Number IGW30N60TPXKSA1 IGW50N60TPXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGW30N60TPXKSA1 IGW50N60TPXKSA1
Product Status Not For New Designs Not For New Designs
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 53 A 80 A
Current - Collector Pulsed (Icm) 90 A 150 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A 1.8V @ 15V, 50A
Power - Max 200 W 319.2 W
Switching Energy 710µJ (on), 420µJ (off) 1.53mJ (on), 850µJ (off)
Input Type Standard Standard
Gate Charge 130 nC 249 nC
Td (on/off) @ 25°C 15ns/179ns 20ns/215ns
Test Condition 400V, 30A, 10.5Ohm, 15V 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3