IGW30N60H3FKSA1 vs IGW50N60H3FKSA1

Product Attributes

Part Number IGW30N60H3FKSA1 IGW50N60H3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGW30N60H3FKSA1 IGW50N60H3FKSA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 100 A
Current - Collector Pulsed (Icm) 120 A 200 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A 2.3V @ 15V, 50A
Power - Max 187 W 333 W
Switching Energy 1.38mJ 2.36mJ
Input Type Standard Standard
Gate Charge 165 nC 315 nC
Td (on/off) @ 25°C 21ns/207ns 23ns/235ns
Test Condition 400V, 30A, 10.5Ohm, 15V 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1