IGP50N60T vs IGW50N60T

Product Attributes

Part Number IGP50N60T IGW50N60T
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGP50N60T IGW50N60T
Product Status Active Active
IGBT Type - Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) - 600 V
Current - Collector (Ic) (Max) - 90 A
Current - Collector Pulsed (Icm) - 150 A
Vce(on) (Max) @ Vge, Ic - 2V @ 15V, 50A
Power - Max - 333 W
Switching Energy - 1.2mJ (on), 1.4mJ (off)
Input Type - Standard
Gate Charge - 310 nC
Td (on/off) @ 25°C - 26ns/299ns
Test Condition - 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature - -40°C ~ 175°C (TJ)
Mounting Type - Through Hole
Package / Case - TO-247-3
Supplier Device Package - PG-TO247-3